| 摘要 |
Provided are: a silicon wafer for solar cells, which is obtained using a slice that is obtained by slicing a polycrystalline silicon ingot by bonded abrasive machining, and which has low reflectance and less gloss unevenness; and a method for producing the silicon wafer for solar cells. A method for producing a silicon wafer for solar cells, wherein a polycrystalline silicon slice, which has been sliced out with use of a fixed abrasive wire saw, is etched by means of an etching liquid that contains a mixed acid composed of hydrofluoric acid, nitric acid and sulfuric acid. The composition range of the mixed acid is within a region that is surrounded by four line segments connecting point A at which hydrofluoric acid is 2.82% by weight, nitric acid is 0.18% by weight and sulfuric acid is 97% by weight, point B at which hydrofluoric acid is 0.18% by weight, nitric acid is 2.82% by weight and sulfuric acid is 97% by weight, point C at which hydrofluoric acid is 8.47% by weight, nitric acid is 0.53% by weight and sulfuric acid is 91% by weight, and point D at which hydrofluoric acid is 0.53% by weight, nitric acid is 8.47% by weight and sulfuric acid is 91% by weight in this order in a ternary diagram that expresses the composition in terms of weight percentage. The density of water in the etching liquid is 0-10.5% by weight. |
