埋め込み拡張領域を有するＳＯＩトランジスタ、及びその形成方法

摘要

A silicon-on-insulator (SOI) transistor device includes a buried insulator layer formed over a bulk substrate; an SOI layer formed on the buried insulator layer; and a pair of silicon containing epitaxial regions disposed adjacent opposing sides of a gate conductor, the epitaxial regions corresponding to source and drain regions of the transistor device; wherein portions of the epitaxial regions are embedded in the buried insulator and are in contact with both vertical and bottom surfaces of the SOI layer corresponding to source and drain extension regions at opposing ends of a channel region of the transistor device.