| 摘要 |
Described is in particular a method of heat treatment of a material layer (102) of a material sandwich (100) comprising the material layer (102) and a substrate (104), wherein the substrate (104) comprises a silicon-oxygen - compound and the material layer (102) comprises a silicon-oxygen compound, the method comprising irradiating the material layer (102) with a pulsed laser beam (114) of a carbon dioxide laser (112). According to an embodiment the irradiating is performed so as to selectively heat the material layer (102) and a substrate portion (116) of the substrate (104), wherein the substrate portion (116) faces (e.g. contacts) the material layer (102). |
