| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a deposition method by which, when an ITO film is deposited by means of a vapor deposition method, a lowering of oxygen concentration can be prevented, thereby capable of achieving low resistance of the ITO film. <P>SOLUTION: In the deposition method, an In-Sn-O based material is used as an evaporation material 3, the evaporation material 3 is arranged in a vapor deposition chamber 1a to be evaporated under reduced pressure, and a transparent conductive film is deposited by vapor deposition on a surface of a substrate W arranged in the vapor deposition chamber 1a. Oxygen gas and water vapor gas are introduced in the vapor deposition chamber 1a in performing the deposition. A gas inlet 83a through which the water vapor gas is introduced at an inside of the vapor deposition chamber 1a is directed toward the vapor deposition face of the substrate W so that the water vapor gas is directly fed toward the substrate W. <P>COPYRIGHT: (C)2013,JPO&INPIT |
