发明名称 |
SEMICONDUCTOR ELEMENT, ELECTRIC APPARATUS, BIDIRECTIONAL FIELD EFFECT TRANSISTOR, AND MOUNTING STRUCTURAL BODY |
摘要 |
Provided are a semiconductor device and a bidirectional field effect transistor which can easily overcome the tradeoff relation between the high voltage resistance and high speed in the semiconductor device using a polarization super junction, realize both the high voltage resistance and elimination of the occurrence of current collapse, operate at a high speed, and further the loss is low. The semiconductor device comprises a polarization super junction region and a p-electrode contact region. The polarization super junction region comprises an undoped GaN layer 11, an undoped Al x Ga 1-x N layer 12 with a thickness not smaller than 25nm and not larger than 47nm and 0.17‰¤x‰¤0.35, an undoped GaN layer 13 and a p-type GaN layer 14. When the reduced thickness tR is defined as tR=u+v(1+w×10 -18 ) for the thickness u [nm] of the undoped GaN layer 13, the thickness v [nm] and the Mg concentration w[cm -3 ] of the p-type GaN layer 14, tR‰¥0.864/(x-0.134)+46.0 [nm] is satisfied. The p-electrode contact region comprises a p-type GaN contact layer formed to be in contact with the p-type GaN layer 14 and a p-electrode that is in contact with the p-type GaN contact layer. |
申请公布号 |
EP2988324(A1) |
申请公布日期 |
2016.02.24 |
申请号 |
EP20140889300 |
申请日期 |
2014.11.18 |
申请人 |
POWDEC K.K. |
发明人 |
ECHIGOYA, SHOKO;NAKAMURA, FUMIHIKO;YAGI, SHUICHI;MATSUMOTO, SOUTA;KAWAI, HIROJI |
分类号 |
H01L21/338;H01L21/329;H01L21/337;H01L27/098;H01L29/06;H01L29/778;H01L29/808;H01L29/812;H01L29/861;H01L29/868 |
主分类号 |
H01L21/338 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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