Method for producing a plurality of optoelectronic semiconductor components in combination, semiconductor component produced in such a way, and use of said semiconductor component

摘要

A method for producing a plurality of optoelectronic semiconductor components in combination is specified. A plurality of radiation-emitting and radiation-detecting semiconductor chips are applied on a carrier substrate. The semiconductor chips are potted with a respective potting compound. The potting compounds are subsequently severed by sawing between adjacent semiconductor chips. A common frame is subsequently applied to the carrier substrate The common frame has a plurality of chambers open toward the top. The frame is arranged in such a way that a respective semiconductor chip is arranged in a respective chamber of the frame. A semiconductor component produced in such a way and the use of the semiconductor component are furthermore specified.

主权项

1. A method for producing a plurality of optoelectronic semiconductor components in combination, each semiconductor component having a radiation-emitting semiconductor chip, a radiation-detecting semiconductor chip and a frame, the method comprising:
providing a carrier substrate; applying a plurality of radiation-emitting semiconductor chips and radiation-detecting semiconductor chips to the carrier substrate and making electrical contact with them, wherein each radiation-detecting semiconductor chip is assigned to a respective radiation-emitting semiconductor chip, wherein each of the radiation-emitting semiconductor chips has an active layer configured to generate radiation, and wherein each of the radiation-detecting semiconductor chips has an active layer configured to detect radiation; potting the plurality of radiation-emitting semiconductor chips with a first potting compound; potting the plurality of radiation-detecting semiconductor chips with a second potting compound; severing the first and second potting compounds by sawing between adjacent semiconductor chips; and applying a common frame to the carrier substrate, the common frame having a plurality of chambers open toward the top, wherein the common frame is arranged in such a way that a respective semiconductor chip is arranged in a respective chamber of the common frame, wherein the frame forms an optical barrier between each chip of the plurality of radiation-detecting semiconductor chips and the respective assigned radiation-emitting semiconductor chip, and wherein, after the applying the common frame, the common frame is separated from the first and second potting compounds by a first region and an adhesive layer is disposed in, and fills, the first region between the frame and the first and second potting compounds for fixing of the frame to the substrate during the applying the common frame, and such that the first and second potting compounds do not directly adjoin the common frame; wherein the plurality of chambers includes a first chamber and a second chamber each having a diaphragm opening in a preferred direction; and wherein side surfaces of the diaphragm openings are formed at different angles and obliquely to a major surface of the substrate.