| 发明名称 | Semiconductor device and fabrication method thereof | ||
| 摘要 | A semiconductor device and a method for fabricating the same are disclosed. In the method, a substrate structure is provided, including a substrate and a fin-shaped buffer layer formed on the surface of the substrate. A QW material layer is formed on the surface of the fin-shaped buffer layer. A barrier material layer is formed on the QW material layer. The QW material layer is suitable for forming an electron gas therein. Thereby the short-channel effect is improved, while high mobility of the semiconductor device is guaranteed. In addition, according to the present disclosure, thermal dissipation of the semiconductor device may be improved, and thus performance and stability of the device may be improved. | ||
| 申请公布号 | US9269772(B2) | 申请公布日期 | 2016.02.23 |
| 申请号 | US201414281007 | 申请日期 | 2014.05.19 |
| 申请人 | SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION | 发明人 | Xiao De Yuan |
| 分类号 | H01L29/06;H01L31/0328;H01L31/0336;H01L31/072;H01L31/109;H01L29/15;H01L29/66;H01L29/78;H01L29/10;H01L29/12;H01L29/778 | 主分类号 | H01L29/06 |
| 代理机构 | Innovation Counsel LLP | 代理人 | Innovation Counsel LLP |
| 主权项 | 1. A semiconductor device comprising: a substrate; a fin-shaped buffer layer over the substrate; a Quantum Well (QW) material layer on the fin-shaped buffer layer, the QW material layer being suitable for forming an electron gas therein; a barrier material layer on the QW material layer; a cap layer on the barrier material layer; and a gate structure, wherein the QW material layer is suitable for forming an electron gas therein, and wherein the gate structure comprises a gate insulating layer on at least a portion of the cap layer, a gate on the gate insulating layer, and a spacer for the gate. | ||
| 地址 | CN | ||