Integration of semiconductor alloys in PMOS and NMOS transistors by using a common cavity etch process

摘要

Different strain-inducing semiconductor alloys may be incorporated into the drain and source areas of different transistors in sophisticated semiconductor devices by at least patterning the corresponding cavities in a common manufacturing sequence. Thus, the etch process may be performed on the basis of a high degree of uniformity and the subsequent epitaxial growth processes may, in some illustrative embodiments, be accomplished on the basis of only one additional lithography step.

主权项

1. A method of forming strained semiconductor materials in transistors of different conductivity type, the method comprising:
forming first cavities in a first active region of a first transistor and second cavities in a second active region of a second transistor; forming a hard mask layer selectively on exposed surface portions of said second cavities, wherein forming said hard mask layer comprises forming a material layer at least on exposed surfaces of said first and second cavities, forming an etch mask to expose said first cavities and cover said second cavities and removing said material layer from said first cavities by using said etch mask; forming a first semiconductor alloy in said first cavities by using said hard mask layer as a growth mask; removing said hard mask layer from within said second cavities; forming a second semiconductor alloy in said second cavities; and removing material of said second semiconductor alloy from said first semiconductor alloy.