| 发明名称 | Interconnect having air gaps and polymer wrapped conductive lines | ||
| 摘要 | A device includes a first conductive line in a first metallization layer over a dielectric layer, wherein the first conductive line is wrapped by a first polymer layer on three sides and the first conductive line and the dielectric layer are separated by a bottom portion of the first polymer layer, a second conductive line over the dielectric layer, wherein the second conductive line is wrapped by a second polymer layer on three sides and the second conductive line and the dielectric layer are separated by a bottom portion of the second polymer layer and an air gap between the first conductive line and the second conductive line. | ||
| 申请公布号 | US9269668(B2) | 申请公布日期 | 2016.02.23 |
| 申请号 | US201414334463 | 申请日期 | 2014.07.17 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Yang Shin-Yi;Lee Hsiang-Huan;Lee Ming-Han;Tien Hsi-Wen;Shue Shau-Lin |
| 分类号 | H01L23/52;H01L29/00;H01L23/532;H01L23/522;H01L23/528;H01L21/768;H01L21/311;H01L21/02;H01L23/538 | 主分类号 | H01L23/52 |
| 代理机构 | Slater & Matsil, L.L.P. | 代理人 | Slater & Matsil, L.L.P. |
| 主权项 | 1. An apparatus comprising: a first conductive line in a first metallization layer over a dielectric layer, wherein: the first conductive line is wrapped by a first polymer layer on three sides; andthe first conductive line and the dielectric layer are separated by a bottom portion of the first polymer layer; a second conductive line over the dielectric layer, wherein: the second conductive line is wrapped by a second polymer layer on three sides; andthe second conductive line and the dielectric layer are separated by a bottom portion of the second polymer layer; and an air gap between the first conductive line and the second conductive line. | ||
| 地址 | Hsin-Chu TW | ||