Methods for etching materials using synchronized RF pulses

摘要

Embodiments of the present invention provide methods for etching a material layer using synchronized RF pulses. In one embodiment, a method includes providing a gas mixture into a processing chamber, applying a first RF source power at a first time point to the processing chamber to form a plasma in the gas mixture, applying a first RF bias power at a second time point to the processing chamber to perform an etching process on the substrate, turning off the first RF bias power at a third time point while continuously maintaining the first RF source power on from the first time point through the second and the third time points, and turning off the first RF source power at a fourth time point while continuously providing the gas mixture to the processing chamber from the first time point through the second, third and fourth time points.

主权项

1. A method of etching a material layer disposed on a substrate using synchronized RF pulses comprising:
providing a gas mixture into a processing chamber having a substrate disposed therein; applying a first RF source power at a first time point to the processing chamber to form a plasma in the gas mixture; applying a first RF bias power at a second time point and a third time point to the processing chamber to perform an etching process on the substrate while continuously applying the first RF source power in the processing chamber from the first time point through the second and the third time points; applying a second RF bias power at the second time point while continuously applying the first RF bias power and the first RF source power in the processing chamber; turning off the second RF bias power at the third time point applied to the processing chamber while continuously maintaining the first RF source and the first RF bias power on from the second time point through the third time points; and turning off the first RF source power and the first RF bias power at a fourth time point applied to the processing chamber while continuously providing the gas mixture to the processing chamber from the first time point through the second, third and fourth time points.