Low TCR high resistance resistor

摘要

The present disclosure involves a method. The method includes providing a substrate including a top surface. The method also includes forming a gate over the top surface of the substrate. The formed gate has a first height measured from the top surface of the substrate. The method also includes etching the gate to reduce the gate to a second height. This second height is substantially less than the first height. The present disclosure also involves a semiconductor device. The semiconductor device includes a substrate. The substrate includes a top surface. The semiconductor device also includes a first gate formed over the top surface of the substrate. The first gate has a first height. The semiconductor device also includes a second gate formed over the top surface of the substrate. The second gate has a second height. The first height is substantially less than the second height.

主权项

1. A method, comprising:
providing a substrate including a top surface; forming a gate and gate spacers over the top surface of the substrate, the gate and gate spacers having a first height measured from the top surface of the substrate; forming a patterned photoresist layer over the substrate, the photoresist layer covering portions of the substrate and exposing the gate, wherein the gate spacers have external side surfaces that are exposed at a point lower than a top of the gate; and etching a gate electrode and the gate spacers of the gate with the photoresist layer present to reduce the gate to a second height, the second height being about 10% to about 75% of the first height.