发明名称 |
Method for determining a mathematical model of the electric behavior of a PN junction diode, and corresponding device |
摘要 |
The electric behavior of a reverse-biased PN junction diode is modeled by measuring the value of voltage V present across the diode and the value of the corresponding current I running through this diode, the voltage V varying within a range of values including the value of diode breakdown voltage. A representation of a function;ln(I-Is)
according to voltage V is established from the measured values of current I and of voltage V, IS being the saturation current of the diode. A linear function representative of a substantially linear portion of the function, characterized by voltages V greater than breakdown voltage VBK in terms of absolute value, is determined. An avalanche multiplication factor MM is then calculated by
;MM=1+ⅇ(-slbv·V+bvbv),
with parameter slbv equal to the ordinate at the origin of the linear function, and parameter slbv/bv equal to the slope of the linear function. |
申请公布号 |
US9268743(B2) |
申请公布日期 |
2016.02.23 |
申请号 |
US201313949884 |
申请日期 |
2013.07.24 |
申请人 |
STMicroelectronics SA |
发明人 |
Manouvrier Jean-Robert |
分类号 |
G06F17/50;G06F17/10 |
主分类号 |
G06F17/50 |
代理机构 |
Gardere Wynne Sewell LLP |
代理人 |
Gardere Wynne Sewell LLP |
主权项 |
1. A method for determining a mathematical model of the electric behavior of a reverse-biased PN junction diode, comprising:
measuring the value of voltage V present across the diode and the value of the corresponding current I running through this diode, said diode being reverse-biased and said voltage V varying within a range of values including the value of breakdown voltage VBK of said diode; establishing a representation of functionln(I-Is)according to voltage V, from said measured values of current I and of voltage V, IS being the saturation current of said diode;
determining a first linear function representative of an approximately linear portion of said functionln(I-Is),said linear portion being characterized by voltages V greater than breakdown voltage VBK in terms of absolute value;
calculating an avalanche multiplication factor defined by:MM=1+ⅇ(-slbv·V+bvbv), wherein:
the values of parameters slbv and bv being extracted from said linear function,slbv being equal to the ordinate at the origin of said linear function, andslbv/bv being equal to the slope of said linear function. |
地址 |
Montrouge FR |