发明名称 Semiconductor device and method of fabricating the same
摘要 A semiconductor device according to one embodiment includes: a semiconductor substrate provided with a semiconductor element; a first conductive member formed on the semiconductor substrate; a first insulating film formed on the same layer as the first conductive member; a second conductive member formed so as to contact with a portion of an upper surface of the first conductive member; a second insulating film formed on the first insulating film so as to contact with a portion of the upper surface of the first conductive member, and including at least one type of element among elements contained in the first insulating film except Si; and an etching stopper film formed on the second insulating film so as to contact with a portion of a side surface of the second conductive member, and having an upper edge located below the upper surface of the second conductive member.
申请公布号 US9269665(B2) 申请公布日期 2016.02.23
申请号 US201514597826 申请日期 2015.01.15
申请人 Kabushiki Kaisha Toshiba 发明人 Wada Makoto;Higashi Kazuyuki
分类号 H01L23/522;H01L21/768;H01L23/532 主分类号 H01L23/522
代理机构 Oblon, McClelland, Maier & Neustadt, L.L.P. 代理人 Oblon, McClelland, Maier & Neustadt, L.L.P.
主权项 1. A semiconductor device, comprising: a semiconductor substrate; a first conductive member formed on the semiconductor substrate, the first conductive member being a contact having a shape of a circle or an elliptical shape in plan view; a first insulating film formed on the same layer as the first conductive member; a second conductive member having a side surface and a bottom surface, and formed so the bottom surface contacts with a portion of an upper surface of the first conductive member, the second conductive member being a wiring that extends beyond the first insulating film in plan view; a second insulating film formed on the first insulating film so as to contact with a portion of the upper surface of the first conductive member, and including at least one type of element among elements contained in the first insulating film except Si; and a third insulating film formed on the second insulating film so as to contact with a portion of the side surface of the second conductive member, and having an upper surface located below the upper surface of the second conductive member.
地址 Minato-ku JP