发明名称 |
Semiconductor device and method of fabricating the same |
摘要 |
A semiconductor device according to one embodiment includes: a semiconductor substrate provided with a semiconductor element; a first conductive member formed on the semiconductor substrate; a first insulating film formed on the same layer as the first conductive member; a second conductive member formed so as to contact with a portion of an upper surface of the first conductive member; a second insulating film formed on the first insulating film so as to contact with a portion of the upper surface of the first conductive member, and including at least one type of element among elements contained in the first insulating film except Si; and an etching stopper film formed on the second insulating film so as to contact with a portion of a side surface of the second conductive member, and having an upper edge located below the upper surface of the second conductive member. |
申请公布号 |
US9269665(B2) |
申请公布日期 |
2016.02.23 |
申请号 |
US201514597826 |
申请日期 |
2015.01.15 |
申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
Wada Makoto;Higashi Kazuyuki |
分类号 |
H01L23/522;H01L21/768;H01L23/532 |
主分类号 |
H01L23/522 |
代理机构 |
Oblon, McClelland, Maier & Neustadt, L.L.P. |
代理人 |
Oblon, McClelland, Maier & Neustadt, L.L.P. |
主权项 |
1. A semiconductor device, comprising:
a semiconductor substrate; a first conductive member formed on the semiconductor substrate, the first conductive member being a contact having a shape of a circle or an elliptical shape in plan view; a first insulating film formed on the same layer as the first conductive member; a second conductive member having a side surface and a bottom surface, and formed so the bottom surface contacts with a portion of an upper surface of the first conductive member, the second conductive member being a wiring that extends beyond the first insulating film in plan view; a second insulating film formed on the first insulating film so as to contact with a portion of the upper surface of the first conductive member, and including at least one type of element among elements contained in the first insulating film except Si; and a third insulating film formed on the second insulating film so as to contact with a portion of the side surface of the second conductive member, and having an upper surface located below the upper surface of the second conductive member. |
地址 |
Minato-ku JP |