| 摘要 |
A thin film transistor (TFT) is provided, which includes a substrate, a first gate layer, an insulation layer, a first source/drain layer, a second source/drain layer, a semiconductor layer, a passivation layer and a second gate layer. The first gate layer is disposed on the substrate. The insulation layer is disposed on the first gate layer. The first source/drain layer is disposed on the insulation layer. The second source/drain layer is disposed on the insulation layer. The semiconductor layer is disposed on the insulation layer and covers the first source/drain layer and the second source/drain layer. The passivation layer is disposed on the insulation layer and covers the semiconductor layer. The second gate layer is disposed on the passivation layer and contacts the first gate layer through a via so that the two gate layers keep a same voltage level. |
| 主权项 |
1. A thin film transistor, comprising:
a substrate; a first gate layer, disposed on the substrate; an insulation layer, disposed on the first gate layer; a first source/drain layer, disposed on the insulation layer; a second source/drain layer, disposed on the insulation layer; a semiconductor layer, disposed on the insulation layer and covering the first source/drain layer and the second source/drain layer; a passivation layer, disposed on the insulation layer and covering the semiconductor layer; and a second gate layer, disposed on the passivation layer, wherein the second gate layer contacts the first gate layer through a via so that the second gate layer and the first gate layer keep a same voltage level, and the second gate layer induces a second carrier transmission channel at the semiconductor layer wherein the thin film transistor is a coplanar thin film transistor. |
