SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A semiconductor device includes a first source layer; a first insulating layer on the first source layer; a first stack material on the first insulating layer; first channel layers which penetrate the first stack material and the first insulating layer; and a second source layer which includes a first region interposed between the first source layer and the first insulating layer, and a second region interposed between the first channel layers and the first insulating layer.