Circuit device

摘要

A circuit device having superior voltage resistance is provided. A structure is achieved that omits the resin layer that is normally provided to the top surface of a circuit board. Specifically, a ceramic substrate (22) is disposed on the top surface of a circuit board (12) comprising a metal, and a transistor (34) such as an IGBT is mounted to the top surface of the ceramic substrate (22). As a result, the transistor (34) and the circuit board (12) are insulated from each other by the ceramic substrate (22). The ceramic substrate (22), which comprises an inorganic material, has an extremely high voltage resistance compared to the conventionally used insulating layer comprising resin, and so even if a high voltage on the order of 1000V is applied to the transistor (34), short circuiting between the transistor (34) and the circuit board (12) is prevented.

主权项

1. A semiconductor device, comprising:
a circuit board made of a metal, the circuit board having an upper surface; an oxide film directly on the upper surface; an island made of a metal film directly on the oxide film; a fixation substrate made of a ceramic and fixed to the island with a fixing material; and a semiconductor element mounted on an upper surface of the fixation substrate.