POWER SEMICONDUCTOR DEVICE

摘要

The present invention relates to a power semiconductor device capable of adjusting the amount of holes by achieving a rectifying junction between a collector layer and a collector electrode. The power semiconductor device comprises: a first conductive drift layer; a second conductive collector layer formed in the lower part of the drift layer; and a collector electrode formed in at least part of the lower part of the collector layer and made of metal having a rectifying junction with the collector layer.