Method of forming a high electron mobility semiconductor device and structure therefor

摘要

In one embodiment, a method of forming a semiconductor device can comprise; forming a HEM device on a semiconductor substrate. The semiconductor substrate provides a current carrying electrode for the semiconductor device and one or more internal conductor structures provide a vertical current path between the semiconductor substrate and regions of the HEM device.

主权项

1. A method of forming a semiconductor device comprising:
providing a base substrate of a first semiconductor material, wherein the base substrate defines a first current carrying electrode of the semiconductor device; forming a III-nitride channel layer over the base substrate; forming a III-nitride barrier layer over the channel layer; forming a second current carrying electrode of the semiconductor device in the barrier layer; forming a gate of the semiconductor device overlying a portion of the barrier layer and spaced apart from the second current carrying electrode; and forming a first internal conductor structure extending from the barrier layer through the channel layer to the base substrate comprising a first conductor within the barrier layer, a second conductor extending from the first conductor to the base substrate and an insulator between the second conductor and the channel layer, wherein the first internal conductor structure forms a low resistance vertical electrical current path from the base substrate to the barrier layer.