Semiconductor devices and methods of manufacturing the same

摘要

A semiconductor device includes a first electrode on a substrate, a selection device pattern, a variable resistance layer pattern, a first protective layer pattern, a second protective layer pattern and a second electrode. The selection device pattern is wider, in a given direction, than the variable resistance layer pattern. The first protective layer pattern is formed on a first pair of opposite sides of the variable resistance layer pattern. The second protective layer pattern is formed on a second pair of opposite of the variable resistance layer pattern. The second electrode is disposed on the variable resistance layer pattern.

主权项

1. A semiconductor device, comprising:
a substrate having a horizontally oriented upper surface; a first electrode on the upper surface of the substrate; a selection device pattern on the first electrode, the selection device pattern having a first pair of sides facing in opposite ways along a first direction parallel to the upper surface of the substrate, and a second pair of sides facing in opposite ways along a second direction parallel to the upper surface of the substrate; a variable resistance layer pattern on the selection device pattern, the variable resistance layer pattern having a first pair of sides facing in opposite ways along the first direction and a second pair of sides facing in opposite ways along the second direction; a second electrode on the variable resistance layer pattern, the second electrode having a pair of sides facing in opposite ways along the second direction; interlayer insulating material disposed on the substrate; first protective vertically oriented layers of insulating material lining the first sides of the variable resistance layer pattern beneath the second electrode, respectively, so as to cover the first sides in the first direction, the first vertically oriented layers being interposed between the variable resistance layer pattern and the interlayer insulating material along the first direction; and second protective vertically oriented layers of insulating material lining the sides of the second electrode and the second sides of the variable resistance layer pattern, respectively, so as to cover the sides of the second electrode and the second sides of the variable resistance layer pattern in the second direction, and wherein the variable resistance layer pattern is narrower than the selection device pattern in the first direction and has the same width as the second electrode in the second direction.