| 摘要 |
An embodiment relates to a light emitting device, a manufacturing method of the light emitting device, a light emitting device package, and a lighting system. According to an embodiment, the light emitting device can comprise: a substrate; a first nitride semiconductor layer arranged on the substrate; an amorphous layer arranged on the substrate; a first conductive semiconductor layer on the first nitride semiconductor layer; an active layer on the first conductive semiconductor layer; and a second conductive semiconductor layer on the active layer. The embodiment provides a high quality nitride semiconductor layer. |
