发明名称 POWER DEVICE AND METHOD FOR FABRICATING THE SAME
摘要 A power device having fast switching characteristic, while keeping electromagnetic interference (EMI) noise to a minimum and a method of fabricating the same are provided. The power device comprises: a first field stop layer having a first conductivity type; a first drift region formed on the first field stop layer and having a first conductivity type in an impurity concentration that is lower than the first field stop layer; a buried region formed on the first drift region and having the first conductivity type in an impurity concentration that is higher than the first drift region; a second drift region formed on the buried region; a power device cell formed at an upper portion of the second drift region; and a collector region formed below the first field stop layer.
申请公布号 KR20160019045(A) 申请公布日期 2016.02.18
申请号 KR20150078244 申请日期 2015.06.02
申请人 FAIRCHILD KOREA SEMICONDUCTOR LTD. 发明人 PARK, KYEONG SEOK;KIM, YOUNG CHUL;KIM, JIN MYUNG;JEON, JAE DUCK;CHOI, YOUNG CHUL
分类号 H01L29/66 主分类号 H01L29/66
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