A power device having fast switching characteristic, while keeping electromagnetic interference (EMI) noise to a minimum and a method of fabricating the same are provided. The power device comprises: a first field stop layer having a first conductivity type; a first drift region formed on the first field stop layer and having a first conductivity type in an impurity concentration that is lower than the first field stop layer; a buried region formed on the first drift region and having the first conductivity type in an impurity concentration that is higher than the first drift region; a second drift region formed on the buried region; a power device cell formed at an upper portion of the second drift region; and a collector region formed below the first field stop layer.
申请公布号
KR20160019045(A)
申请公布日期
2016.02.18
申请号
KR20150078244
申请日期
2015.06.02
申请人
FAIRCHILD KOREA SEMICONDUCTOR LTD.
发明人
PARK, KYEONG SEOK;KIM, YOUNG CHUL;KIM, JIN MYUNG;JEON, JAE DUCK;CHOI, YOUNG CHUL