LIGHT-EMITTING DIODE CHIP WITH DISTRIBUTED BRAGG REFLECTOR, MANUFACTURING METHOD THEREOF, AND LIGHT-EMITTING DIODE PACKAGE WITH DISTRIBUTED BRAGG REFLECTOR

摘要

PROBLEM TO BE SOLVED: To provide: a distributed Bragg reflector having a high reflectance over a wide wavelength range; a light-emitting diode chip for which such a distributed Bragg reflector is adopted; and a light-emitting diode package.SOLUTION: A light-emitting diode chip according to the present invention comprises: a substrate; a light emission structure located on the substrate and including an active layer disposed between a first conductivity type semiconductor layer and a second conductivity type semiconductor layer; and a distributed Bragg reflector which reflects light emitted from the light emission structure. The distributed Bragg reflector has a reflectance of 90% or more for light of a first wavelength of a blue-color wavelength region, light of a second wavelength of a green-color wavelength region, and light of a third wavelength of a red-color wavelength region.SELECTED DRAWING: Figure 3