发明名称 |
DISPLAY PANEL |
摘要 |
A display panel is disclosed, which comprises: a substrate; a thin film transistor unit disposed on the substrate, wherein the thin film transistor unit comprises a gate electrode and a semiconductor layer, wherein the semiconductor layer comprises a carrier channel region, and the gate electrode is disposed corresponding to the carrier channel region; a first metal oxide layer disposed on the semiconductor layer and covering the carrier channel region; and an isolation layer containing silicon oxide (SiOx) or aluminum oxide (Al2O3) disposed between the semiconductor layer and the first metal oxide layer; wherein the light transmittance of light with wavelength range from 210 nm to 350 nm through the first metal oxide layer is under or equal to 50% |
申请公布号 |
US2016049524(A1) |
申请公布日期 |
2016.02.18 |
申请号 |
US201514793792 |
申请日期 |
2015.07.08 |
申请人 |
InnoLux Corporation |
发明人 |
SHEN I-Ho;CHONG Geeng-Jieh |
分类号 |
H01L29/786;H01L27/12;H01L29/06 |
主分类号 |
H01L29/786 |
代理机构 |
|
代理人 |
|
主权项 |
1. A display panel, comprising:
a substrate; a thin film transistor unit disposed on the substrate, wherein the thin film transistor unit comprises a gate electrode and a semiconductor layer, wherein the semiconductor layer comprises a carrier channel region, and the gate electrode is disposed corresponding to the carrier channel region; a first metal oxide layer disposed on the semiconductor layer and covered the carrier channel region; and an isolation layer containing silicon oxide (SiOx) or aluminum oxide (Al2O3) disposed between the semiconductor layer and the first metal oxide layer; wherein the light transmittance of light with wavelength range from 210 nm to 350 nm through the first metal oxide layer is under or equal to 50%. |
地址 |
Miao-Li County TW |