发明名称 Long-term heat treated integrated circuit arrangements and methods for producing the same
摘要 An explanation is given of, inter alia, methods in which the barrier material is removed at a via bottom or at a via top area by long-term heat treatment. Concurrently or alternatively, interconnects are coated with barrier material in a simple and uncomplicated manner by means of the long-term heat treatment.
申请公布号 US2016049329(A1) 申请公布日期 2016.02.18
申请号 US201314138241 申请日期 2013.12.23
申请人 Infineon Technologies AG 发明人 Aubel Oliver;Hasse Wolfgang;Hommel Martina;Koerner Heinrich
分类号 H01L21/768 主分类号 H01L21/768
代理机构 代理人
主权项 1. A method for producing an integrated circuit arrangement, in which heat treatment is effected once or repeatedly, wherein as a result of the heat treatment a barrier material layer between a via conductive structure and an interconnect is removed, perforated or thinned by at least 50%.
地址 Neubiberg DE