发明名称 |
Long-term heat treated integrated circuit arrangements and methods for producing the same |
摘要 |
An explanation is given of, inter alia, methods in which the barrier material is removed at a via bottom or at a via top area by long-term heat treatment. Concurrently or alternatively, interconnects are coated with barrier material in a simple and uncomplicated manner by means of the long-term heat treatment. |
申请公布号 |
US2016049329(A1) |
申请公布日期 |
2016.02.18 |
申请号 |
US201314138241 |
申请日期 |
2013.12.23 |
申请人 |
Infineon Technologies AG |
发明人 |
Aubel Oliver;Hasse Wolfgang;Hommel Martina;Koerner Heinrich |
分类号 |
H01L21/768 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
|
主权项 |
1. A method for producing an integrated circuit arrangement, in which heat treatment is effected once or repeatedly, wherein as a result of the heat treatment a barrier material layer between a via conductive structure and an interconnect is removed, perforated or thinned by at least 50%. |
地址 |
Neubiberg DE |