| 发明名称 |
APPARTUSES AND METHODS FOR SENSING USING AN INTEGRATION COMPONENT |
| 摘要 |
The present disclosure includes apparatuses and methods for sensing a resistance variable memory cell. A number of embodiments include circuitry to provide a programming signal to a memory cell in the array, the programming signal associated with programming the memory cell to a particular data state; and determine, via an integration component, if a data state of the memory cell changes to a different data state responsive to the programming signal being provided. |
| 申请公布号 |
US2016049194(A1) |
申请公布日期 |
2016.02.18 |
| 申请号 |
US201414458813 |
申请日期 |
2014.08.13 |
| 申请人 |
Micron Technology, Inc. |
发明人 |
Bedeschi Ferdinando |
| 分类号 |
G11C13/00 |
主分类号 |
G11C13/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An apparatus, comprising:
an array of resistance variable memory cells; and circuitry configured to:
provide a programming signal to a memory cell in the array, the programming signal associated with programming the memory cell to a particular data state; anddetermine, via an integration component, if a data state of the memory cell changes to a different data state responsive to the programming signal being provided to the memory cell, wherein a comparison component is configured to provide a signal associated with a resistance of the memory cell to the integration component. |
| 地址 |
Boise ID US |
