发明名称 |
THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE AND DISPLAY DEVICE |
摘要 |
A thin film transistor and manufacturing method thereof, array substrate and display device; the thin film transistor comprises a gate electrode (1), an active area (2), a source electrode contact area (3) and a drain electrode contact area (4); the gate electrode (1) is provided on the active area (2); and the source electrode contact area (3) and the drain electrode contact area (4) are respectively provided at two opposite sides of the active area (2). The thin film transistor further comprises a non-metal light-shielding layer (5); the non-metal light-shielding layer (5) is provided below the active area (2), and at least partially overlaps with the active area (2) in an orthographic projection direction; and the non-metal light-shielding layer (5) shields all visible light coming from a backlight and irradiated onto the non-metal light-shielding layer (5). |
申请公布号 |
WO2016023305(A1) |
申请公布日期 |
2016.02.18 |
申请号 |
WO2014CN92908 |
申请日期 |
2014.12.03 |
申请人 |
BOE TECHNOLOGY GROUP CO., LTD.;ORDOS YUANSHENG OPTOELECTRONICS CO., LTD. |
发明人 |
SUN, JIAN;FAN, JUN |
分类号 |
H01L29/786;H01L21/336;H01L23/552 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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