TFT SUBSTRATE INCLUDING BARRIER LAYER INCLUDING SILICON OXIDE LAYER AND SILICON SILICON NITRIDE LAYER, ORGANIC LIGHT-EMITTING DEVICE COMPRISING THE TFT SUBSTRATE, AND THE MANUFACTURING METHOD OF THE TFT SUBSTRATE

摘要

According to an embodiment of the present invention, provided is a thin-film transistor substrate, which includes: a flexible substrate; a first barrier layer formed by directly touching a plastic substrate, and including a first silicon oxide layer and a first silicon nitride layer; a second barrier layer formed on the first barrier layer, and including a second silicon oxide layer and a second silicon nitride layer; a silicon oxynitride layer placed between the first and second barrier layers; and a thin-film transistor (TFT) layer formed on the second barrier layer. The second silicon oxide layer is placed nearer the TFT layer than the second silicon nitride layer. The entire thickness of the silicon nitride layers, included in the first and second barrier layers, is thinner than the entire thickness of the silicon oxide layers, included in the first and second barrier layers.