| 发明名称 |
MANUFACTURING METHOD OF SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND SEMICONDUCTOR LIGHT-EMITTING ELEMENT |
| 摘要 |
There are provided a setting process configured to set in a chamber an aluminum nitride substrate in which a semiconductor layer is formed on a first principal plane, and an oxide film forming process configured to heat an inside of the chamber with a water molecule being introduced in the chamber and to form an oxide film including an amorphous oxide film and/or a crystalline oxide film on a second principal plane located on an opposite side to the first principal plane of the aluminum nitride substrate. |
| 申请公布号 |
US2016049552(A1) |
申请公布日期 |
2016.02.18 |
| 申请号 |
US201414779664 |
申请日期 |
2014.03.28 |
| 申请人 |
ASAHI KASEI KABUSHIKI KAISHA |
发明人 |
TAKEDA Koumei;YAMADA Satoshi |
| 分类号 |
H01L33/22;H01L33/00;H01L33/32;H01L33/44 |
主分类号 |
H01L33/22 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A manufacturing method of a semiconductor light-emitting element, the manufacturing method comprising:
setting in a chamber an aluminum nitride substrate in which a semiconductor layer is formed on a first principal plane; and heating an inside of the chamber with a water molecule being introduced in the chamber to form an oxide film including an amorphous oxide film and/or a crystalline oxide film on a second principal plane located on an opposite side to the first principal plane of the aluminum nitride substrate. |
| 地址 |
Tokyo JP |
