发明名称 |
GLOBAL SHUTTER IMAGE SENSOR, AND IMAGE PROCESSING SYSTEM HAVING THE SAME |
摘要 |
A global shutter image sensor according to an exemplary embodiment of the present inventive concepts includes a semiconductor substrate including a first surface and a second surface, a photo-electric conversion region formed in the semiconductor substrate, a storage diode formed in a vicinity of the photo-electric conversion region in the semiconductor substrate, a drain region formed above the photo-electric conversion region in the semiconductor substrate, a floating diffusion region formed above the storage diode in the semiconductor substrate, an overflow gate transferring first charges from the photo-electric conversion region to the drain region, a storage gate transferring second charges from the photo-electric conversion region to the storage diode, and a transfer gate transferring the second charges from the storage diode to the floating diffusion region. The overflow gate, the photo-electric conversion region, the storage gate, the storage diode, the transfer gate, and the floating diffusion region are formed in a row. |
申请公布号 |
US2016049429(A1) |
申请公布日期 |
2016.02.18 |
申请号 |
US201514819715 |
申请日期 |
2015.08.06 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE Jun Suk;KIM Young Chan;AHN Jung Chak;JUNG Young Woo |
分类号 |
H01L27/146 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
1. A global shutter image sensor, comprising:
a semiconductor substrate including a first surface and a second surface; a photo-electric conversion region in the semiconductor substrate; a storage diode in the semiconductor substrate adjacent the photo-electric conversion region; a drain region adjacent the photo-electric conversion region in the semiconductor substrate; a floating diffusion region adjacent the storage diode in the semiconductor substrate; an overflow gate to transfer first charges from the photo-electric conversion region to the drain region; a storage gate to transfer second charges from the photo-electric conversion region to the storage diode; and a transfer gate to transfer the second charges from the storage diode to the floating diffusion region, wherein the overflow gate, the photo-electric conversion region, the storage gate, the storage diode, the transfer gate, and the floating diffusion region are in a same row. |
地址 |
Suwon-si KR |