LIGHT EMITTING DIODE DEVICE

摘要

The present invention relates to a light emitting diode (LED) and a flip-chip packaged LED device. The present invention provides an LED device. The LED device is flipped on and connected electrically with a packaging substrate and thus forming the flip-chip packaged LED device. The LED device mainly has an Ohmic-contact layer and a planarized buffer layer between a second-type doping layer and a reflection layer. The Ohmic-contact layer improves the Ohmic-contact characteristics between the second-type doping layer and the reflection layer without affecting the light emitting efficiency of the LED device and the flip-chip packaged LED device. The planarized buffer layer id disposed between the Ohmic-contact layer and the reflection layer for smoothening the Ohmic-contact layer and hence enabling the reflection layer to adhere to the planarized buffer layer smoothly. Thereby, the reflection layer can have the effect of mirror reflection and the scattering phenomenon on the reflected light can be reduced as well.

主权项

1. A light emitting diode device, comprising:
a first-type doping layer; a second-type doping layer; a light emitting layer disposed between the first-type doping layer and the second-type doping layer; an Ohmic-contact layer disposed on the second-type doping layer; a material layer disposed on the Ohmic-contact layer, the material layer at least comprising a metal oxide layer; a first electrode disposed on and electrically connected to the first-type doping layer; a second electrode; and a metal layer disposed between the second electrode and the Ohmic-contact layer, the second electrode being electrically connected to the Ohmic-contact layer through the metal layer.