| 摘要 |
This mask blank 1 provided with a resist film is provided with: a substrate 10 having a thin film 11; and a negative resist film 12 formed at the surface of the thin film 11. In the resist film 12, a photoacid generator low-concentration region 12a is formed at a section at which the resist film 12 contacts the thin film 11, the photoacid generator low-concentration region 12a has a lower concentration of a photoacid generator than the other regions of the resist film 12, the thickness of the photoacid generator low-concentration region 12a is 5-40% of the thickness of the resist film 12, and the concentration of the photoacid generator at the section of the photoacid generator low-concentration region 12a that contacts the thin film 11 is a value decreased by 10-40% from the concentration of the photoacid generator at the other regions of the resist film 12. |
