| 发明名称 |
METHOD OF FORMING GERMANIUM FILM AND APPARATUS THEREFOR |
| 摘要 |
There is provided a method of forming a germanium (Ge) film on a surface of a target object, which includes: supplying an aminosilane-based gas into a processing chamber in which the target object is loaded; supplying a high-order silane-based gas of disilane or higher into the processing chamber; and supplying a Ge source gas into the processing chamber. A process temperature in supplying the Ge source gas is set to fall within a range from a temperature, at which the Ge source gas is thermally decomposed or higher, to 300 degrees C. or less. |
| 申请公布号 |
US2016049298(A1) |
申请公布日期 |
2016.02.18 |
| 申请号 |
US201514816584 |
申请日期 |
2015.08.03 |
| 申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
OKADA Mitsuhiro |
| 分类号 |
H01L21/02;C23C16/52;C23C16/455 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a germanium (Ge) film on a surface of a target object, comprising:
supplying an aminosilane-based gas into a processing chamber in which the target object is loaded; supplying a high-order silane-based gas of disilane or higher into the processing chamber; and supplying a Ge source gas into the processing chamber, wherein a process temperature in supplying the Ge source gas is set to fall within a range from a temperature, at which the Ge source gas is thermally decomposed or higher, to 300 degrees C. or less. |
| 地址 |
Tokyo JP |
