| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME |
| 摘要 |
A method for fabricating a semiconductor device comprises forming a gate insulation layer on a substrate including a first region and a second region, forming a first gate conductive layer and a capping layer on the first region and the second region and heat-treating the substrate, removing the capping layer from the first region and the second region, forming a second gate conductive layer on the first region and the second region, nitriding the second gate conductive layer, and forming a third gate conductive layer on the second region. |
| 申请公布号 |
US2016049478(A1) |
申请公布日期 |
2016.02.18 |
| 申请号 |
US201514678331 |
申请日期 |
2015.04.03 |
| 申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Song Moon-Kyun;Kim Weon-Hong;Choi Soo-Jung;Hwang Yoon-Tae |
| 分类号 |
H01L29/40;H01L29/49;H01L29/51 |
主分类号 |
H01L29/40 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for fabricating a semiconductor device, the method comprising:
forming a gate insulation layer on a substrate including a first region and a second region; forming a first gate conductive layer and a capping layer on the first region and the second region and heat-treating the substrate; removing the capping layer from the first region and the second region; forming a second gate conductive layer on the first region and the second region; nitriding the second gate conductive layer; and forming a third gate conductive layer on the second region. |
| 地址 |
Suwon-si KR |
