PRECURSORS FOR GST FILMS IN ALD/CVD PROCESSES

摘要

The present invention is a method for manufacturing a germanium-antimony-tellurium (GST) alloy or a germanium-bismuth-tellurium (GBT) film using a process selected from a group comprising atomic layer deposition (ALD) or chemical vapor deposition (CVD). Here, a silyl antimony precursor is used as a supply source of antimony for an alloy film. The present invention relates to a method for using the silyl antimony precursor or a silyl bismuth precursor as the supply source of antimony or bismuth, as the method for manufacturing an antimony alloy with other elements using the process selected from the group comprising the atomic layer deposition and chemical vapor deposition.