Hetero-Substrate, Nitride-Based Semiconductor Light Emitting Device, and Method for Manufacturing the same

摘要

Disclosed herein is a light emitting device, in particular, are a hetero-substrate, a nitride-based semiconductor light emitting device, and a method of manufacturing the same. The hetero-substrate includes a hetero-substrate includes a substrate (10) including a silicon semiconductor, a buffer layer (30) disposed on the substrate, a first semiconductor layer (40) disposed on the buffer layer and including a nitride semiconductor, a second semiconductor layer (53 or 200) disposed on the first semiconductor layer and including a first conductive type nitride semiconductor having a first doping concentration, and a stress control structure (50) disposed between the first semiconductor layer and the second semiconductor layer and including at least one stress compensation layer (51) and at least one third semiconductor layer (52) including a first conductive type nitride semiconductor having a second doping concentration that is the same or lower than the first doping concentration.