| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which allows each semiconductor element to obtain sufficient bonding strength by reducing pressurization unevenness between semiconductor elements even when a plurality of semiconductor elements having a different thickness are simultaneously heated and pressurized.SOLUTION: A semiconductor device comprises: a first semiconductor element; a second semiconductor element thinner than the first semiconductor element; an insulating substrate including a wiring circuit on which the first semiconductor element and the second semiconductor element are mounted; a first metal body connected via a first sintered layer on the surface on the side opposite to the surface on which the wiring circuit is arranged in the first semiconductor element; and a second metal body connected via a second sintered layer on the surface on the side opposite to the surface on which the wiring circuit is arranged in the second semiconductor element. The second metal body is thicker than the first metal body. The density of the second metal body is also higher than the density of the first metal body. |
