Semiconductor light emitting device and method for manufacturing the same

摘要

According to one embodiment, a semiconductor light emitting device includes: a semiconductor layer (15); a first electrode (16); a first interconnection layer (21); a second electrode (17); a second interconnection layer (22); a support substrate (25); a bonding layer (27); a first terminal (23a); and a second terminal (24a). The support substrate (25) has a third face (25a) facing the semiconductor layer (15), the first interconnection layer (21), and the second interconnection layer (22) and a fourth face (25b) opposite to the third face (25a). The support substrate (25) has a first opening (92a) extending from the fourth face (25b) to the first interconnection layer (21) and a second opening (92b) extending from the fourth face (25b) to the second interconnection layer (22). The bonding layer (27) is provided between the support substrate (25) and each of the semiconductor layer (15), the first interconnection layer (21), and the second interconnection layer (22).