发明名称 |
Power transistor arrangement and package having the same |
摘要 |
Various embodiments provide a power transistor arrangement, which may include a carrier including at least a main region, a first terminal region and a second terminal region being electrically isolated from each other; a first power transistor having a control electrode, a first power electrode and a second power electrode, and being arranged on the main region of the carrier such that its first power electrode is facing towards and is electrically coupled to the main region of the carrier; a second power transistor having a control electrode, a first power electrode and a second power electrode, and being arranged on the terminal regions of the carrier such that its control electrode and its first power electrode are facing towards the terminal regions, and having its control electrode being electrically coupled to the first terminal region and its first power electrode being electrically coupled to the second terminal region. |
申请公布号 |
US9263440(B2) |
申请公布日期 |
2016.02.16 |
申请号 |
US201313763769 |
申请日期 |
2013.02.11 |
申请人 |
INFINEON TECHNOLOGIES AUSTRIA AG |
发明人 |
Otremba Ralf;Hoeglauer Josef;Schredl Juergen;Schloegel Xaver;Schiess Klaus |
分类号 |
H01L23/495;H01L27/088;H01L23/498;H01L23/00;H01L25/07 |
主分类号 |
H01L23/495 |
代理机构 |
Viering, Jentschura & Partner MBB |
代理人 |
Viering, Jentschura & Partner MBB |
主权项 |
1. A power transistor arrangement, comprising:
a carrier comprising at least a main region and a first terminal region and a second terminal region, the main region, the first terminal region and the second terminal region being electrically isolated from each other; a first power transistor having a control electrode and a first power electrode and a second power electrode, the first power transistor being arranged over the main region of the carrier such that the first power electrode of the first power transistor is facing towards the main region of the carrier and is electrically coupled to the main region of the carrier; a second power transistor having a control electrode and a first power electrode and a second power electrode, the second power transistor being arranged over the first terminal region and the second terminal region such that the control electrode of the second power transistor and the first power electrode of the second power transistor are facing towards the terminal regions of the carrier, wherein the control electrode of the second power transistor is electrically coupled to the first terminal region of the carrier, and wherein the first power electrode of the second power transistor is electrically coupled to the second terminal region of the carrier; wherein the control electrode of the first power transistor is electrically coupled to one of the first terminal region and the second terminal region; and wherein the second power electrode of the first power transistor and the second power electrode of the second power transistor are electrically coupled with each other. |
地址 |
Villach AT |