Diode biased ESD protection device and method

摘要

An ESD protection device includes an MOS transistor with a source region, drain region and gate region. A node designated for ESD protection is electrically coupled to the drain. A diode is coupled between the gate and source, wherein the diode would be reverse biased if the MOS transistor were in the active operating region.

主权项

1. An electrostatic discharge (ESD) protection device comprising:
an MOS transistor comprising a gate, a drain, and a source disposed in a first semiconductor region; a node designated for ESD protection electrically connected to the drain; an internal parasitic capacitance coupled between the gate and the drain; a p+/n+ diode coupled between the gate and source and disposed in a second semiconductor region within the first semiconductor region; and a complimentary p+/n+ diode coupled between the gate and source and disposed in a third semiconductor region within the first semiconductor region, wherein the p+/n+ diode and the complimentary p+/n+ diode are symmetrically located on opposite sides of the source, wherein the p+/n+ diode and the complimentary p+/n+ diode would be reverse biased if the MOS transistor were in an active operating region, wherein the gate is isolated from all other nodes except the internal parasitic capacitance, the p+/n+ diode, and the complimentary p+/n+ diode.