| 摘要 |
PROBLEM TO BE SOLVED: To provide a photoelectric conversion element which prevents decrease in a short-circuit current density caused by carrier recombination of a photoelectric conversion layer composed of a CIGS film on a back electrode side and which has excellent adhesion between the photoelectric conversion layer and the back electrode; and provide a manufacturing method of the photoelectric conversion element.SOLUTION: A photoelectric conversion element comprises a back electrode and a photoelectric conversion layer including a CIGS film composed of a CIGS-based semiconductor compound on a substrate. On a surface of the back electrode, a plurality of nanoparticles each including a CuGaSe-based compound composed of Cu, Ga and Se at least on a surface are arranged in a dispersed manner. |
