Solid state imaging device

摘要

A solid-state imaging device having an arrangement in which well contact is achieved for each pixel is provided. In the solid-state imaging device, a well contact part is formed in an activation region of a photoelectric conversion portion. The well contact part fixes a well in which the photoelectric conversion portion and transistors of the pixel are provided at a predetermined potential.

主权项

1. A solid-state imaging device comprising:
a pixel array area including pixels arranged in second conductivity type well regions in a two-dimensional array fashion, each of the pixels including: a photoelectric conversion portion including an activation region; and a first impurity region of a first conductivity type and a second impurity region of a second conductivity type provided over the first impurity region; well potential fixing parts for fixing the second conductivity type well regions at a predetermined potential; wherein the photoelectric conversion portion includes a first impurity region of a first conductivity type and a second impurity region of a second conductivity type provided over the first impurity region, and
wherein the well potential fixing parts have an activation region connectedeach connect to a metal wiring from an upper portion of the second conductivity type well region and a third impurity region of second conductivity type, wherein: the photoelectric conversion portion includes a first impurity region of a first conductivity type and a second impurity region of a second conductivity type provided on the first impurity regionand the well potential fixing parts are located in a part of a corresponding photoelectric conversion portion; and each of the well potential fixing parts includes an impurity region of the second conductivity type whose density is higher than the second impurity region.