| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a power semiconductor device which reduces stress that results from a wiring member and is applied to a power semiconductor element thereby achieving high reliability. <P>SOLUTION: In a power semiconductor device, an electrode member 6 is used for electrically connecting electrodes formed on second surfaces of power semiconductor elements 4 and 5, which are joined to a circuit surface 3fs of a circuit board 3 on first surfaces thereof, with a wiring member 7C for connecting with an external circuit and includes: a first electrical connection part 6fs for electrically connecting with the electrodes; a second electrical connection part 6j which is installed so as to allow the wiring member 7C to be spaced a distance away from the circuit surface 3fs and is used for electrically connecting with the wiring member 7C; and a joining part 6fb formed between the second electrical connection part 6j and the first electrical connection part 6fs and used for joining to a portion of the circuit surface 6fs which is separated from a portion to which the first surfaces are joined. <P>COPYRIGHT: (C)2013,JPO&INPIT |
