| 发明名称 | Localized fin width scaling using a hydrogen anneal | ||
| 摘要 | Transistors and methods for fabricating the same include forming one or more semiconductor fins on a substrate; covering source and drain regions of the one or more semiconductor fins with a protective layer; annealing uncovered channel portions of the one or more semiconductor fins in a gaseous environment to reduce fin width and round corners of the one or more semiconductor fins; and forming a dielectric layer and gate over the thinned fins. | ||
| 申请公布号 | US9263554(B2) | 申请公布日期 | 2016.02.16 |
| 申请号 | US201313909602 | 申请日期 | 2013.06.04 |
| 申请人 | INTERNATIONAL BUSINESS MACHINES CORPORATION | 发明人 | Basker Veeraraghavan S.;Mochizuki Shogo;Yamashita Tenko;Yeh Chun-Chen |
| 分类号 | H01L21/336;H01L29/66;H01L29/78 | 主分类号 | H01L21/336 |
| 代理机构 | Tutunjian & Bitetto, P.C. | 代理人 | Tutunjian & Bitetto, P.C. ;Alexanian Vazken |
| 主权项 | 1. A method for fabricating a transistor, comprising: forming one or more semiconductor fins on a substrate; covering source and drain regions of the one or more semiconductor fins with a protective layer; annealing uncovered channel portions of the one or more semiconductor fins in a gaseous environment to reduce fin width, to produce a fin profile that is widest at the bottom and tapers toward the top, and to round corners of the one or more semiconductor fins; and forming a dielectric layer and gate over the thinned fins. | ||
| 地址 | Armonk NY US | ||