Thin-film transistor and fabrication method thereof, array substrate and display device

摘要

Embodiments of the invention provide a thin-film transistor and a fabrication method thereof, an array substrate and a display device. The thin-film transistor comprises a gate electrode (2), an active layer (4), source and drain electrodes (6), and a gate insulating layer (3) provided between the gate electrode (2) and the active layer (4). The gate electrode (2) comprises a gate electrode metal layer (23) and a first protection layer (32), the first protection layer (32) is provided between the gate electrode metal layer (23) and the gate insulating layer (3) to isolate the active layer (4) from the gate electrode metal layer (23). The gate electrode metal layer (23) is made of copper or copper alloy.

主权项

1. A thin-film transistor, comprising a gate electrode, an active layer, source and drain electrodes, and a gate insulating layer provided between the gate electrode and the active layer, wherein:
the gate electrode comprises:
a gate electrode metal layer,a first protection layer, the first protection layer being provided between the gate electrode metal layer and the gate insulating layer to isolate the active layer from the gate electrode metal layer, and the first protection layer comprising a third gate protection layer and a fourth gate protection layer, at least one of the third gate protection layer and the fourth gate protection layer being a multi-layer structure; anda second protection layer, the second protection layer being provided on an side of the gate electrode metal layer opposite to the first protection layer, and the second protection layer comprising a first gate protection layer and a second gate protection layer, the second gate protection layer being a multi-layer structure and provided between the first gate protection layer and the gate electrode metal layer.