| 摘要 |
To be able to form a copper-zinc-tin alloy which optionally comprises at least one chalcogenide and thus forms a semiconductor without the use of toxic substances a metal plating composition for the deposition of a copper-zinc-tin alloy is disclosed, wherein said metal plating composition comprises at least one copper plating species, at lease one zinc plating species, at least one tin plating species and at least one complexing agent and further, if the alloy contains at least one chalcogen, at least one chalcogen plating species. |
| 主权项 |
1. A metal plating composition for the deposition of a copper-zinc-tin alloy, said alloy additionally containing at least one chalcogen, the metal plating composition comprising at least one copper plating species, at least one zinc plating species, at least one tin plating species, at least one complexing agent and at least one chalcogen plating species,
wherein the metal plating composition additionally comprises at least one additive, selected from the group consisting of disubstituted benzene compounds having general chemical formula I: wherein R1 and R2 are the same or different, are selected independently from the group consisting of OH, SH, NR3R4, CO—R5, COOR5, CONR3R4, COSR5, SO2OR5, SO2R5, SO2NR3R4 and the salts thereof or have the aforementioned meanings and form a common condensation chain; with R3 and R4 being the same or different, being selected independently from the group consisting of H and alkyl; and with R5 being selected from the group consisting of H, alkyl and hydroxyalkyl, and wherein the metal plating composition has a pH in the range of greater than 10.5 to about 12. |
