Cell having shifted boundary and boundary-shift scheme

摘要

An embodiment cell shift scheme includes abutting a first transistor cell against a second transistor cell and shifting a place and route boundary away from a polysilicon disposed between the first transistor cell and the second transistor cell. In an embodiment, the cell shift scheme includes shifting the place and route boundary to prevent a mismatch between a layout versus schematic (LVS) netlist and a post-simulation netlist.

主权项

1. A method comprising:
abutting a first transistor cell against a second transistor cell, a polysilicon feature extending from the first transistor cell to the second transistor cell; shifting a place and route boundary between the first transistor cell and the second transistor cell away from the polysilicon feature, thereby defining a modified first transistor cell and a modified second transistor cell; creating a netlist comprising the modified first transistor cell and the modified second transistor cell, the netlist comprising a device associated with the polysilicon feature; and shifting, by a computer, the place and route boundary to prevent a mismatch between a layout versus schematic (LVS) netlist and a post-simulation netlist.