发明名称 |
Methods of measuring and controlling inner temperature of a chamber included in a test handler |
摘要 |
To measure an inner temperature of a chamber included in a test handler, self-refresh currents of semiconductor memory devices under test are measured. The semiconductor memory devices are disposed in the chamber and have a function of linear temperature compensated self-refresh (Li-TCSR). Local temperature values are generated based on the self-refresh currents, where each local temperature value indicates a temperature near the corresponding semiconductor memory device of the semiconductor memory devices under test. |
申请公布号 |
US9261555(B2) |
申请公布日期 |
2016.02.16 |
申请号 |
US201313771359 |
申请日期 |
2013.02.20 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Yoon Sang-Kyu;Ryu Sang-Joon;Lee Hwa-Cheol;Cho Yong-Hwan |
分类号 |
G01K7/00;G01K13/00;G01K3/00;G01K1/00;G01R31/26;G01R31/28;G11C29/06;G11C29/56;G11C11/40 |
主分类号 |
G01K7/00 |
代理机构 |
Harness, Dickey & Pierce, P.L.C. |
代理人 |
Harness, Dickey & Pierce, P.L.C. |
主权项 |
1. A method comprising:
measuring self-refresh currents of semiconductor memory devices under test, the semiconductor memory devices under test disposed in a chamber included in a test handler and having a function of linear temperature compensated self-refresh (Li-TCSR); and generating local temperature values based on the self-refresh currents, each local temperature value indicating a temperature near a corresponding semiconductor memory device of the semiconductor memory devices under test. |
地址 |
Gyeonggi-do KR |