| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma CVD device which can generate plasma in a cathode depressed part (hollow) across a wide area in order to obtain a high-quality amorphous silicon thin-film of a large size with few defects and few inclusion of high-order silane. <P>SOLUTION: A plasma CVD device 1 comprises a vacuum container 2; an exhaust system 6 for retaining the interior of the vacuum container under a reduced pressure; a ground electrode 11 for placing thereon a substrate on which film is formed; a cathode 3 including a plurality of depressed parts 4; a potential shielding plate 8 between the ground electrode 11 and the cathode 3, which has a plurality of lead-through holes 9 formed so as to face the depressed parts 4 each other and is capable of maintaining potential constant; and a high-frequency power supply 15 for applying high-frequency power to the cathode 3. In the plasma CVD device 1, there is provided an ignition assistance plate 10 between the potential shielding plate 8 and the ground electrode 11. <P>COPYRIGHT: (C)2012,JPO&INPIT |
