| 发明名称 | Contact plug and method for manufacturing the same | ||
| 摘要 | A method for manufacturing a contact plug is provided. The method includes providing a silicon substrate having at least one opening. A titanium layer is conformably formed in the opening. A first barrier layer is conformably formed on the titanium layer in the opening. A rapid thermal process is performed on the titanium layer and the first barrier layer. After performing the rapid thermal process, a second barrier layer is conformably formed on the first barrier layer in the opening. | ||
| 申请公布号 | US9263281(B2) | 申请公布日期 | 2016.02.16 |
| 申请号 | US201314015538 | 申请日期 | 2013.08.30 |
| 申请人 | Vanguard International Semiconductor Corporation | 发明人 | Jan Yi-Tsung;Wu Peng-Fei;Kao Chih-Ming;Liau You-Cheng;Chuang Wen-Jen;Wu Rong-Gen;Chien Huan-Yu;Kuo Ting-Yu;Lin Su-Chen |
| 分类号 | H01L21/768;H01L23/52;H01L21/285;H01L21/74 | 主分类号 | H01L21/768 |
| 代理机构 | Birch, Stewart, Kolasch & Birch, LLP | 代理人 | Birch, Stewart, Kolasch & Birch, LLP |
| 主权项 | 1. A contact plug, comprising: a silicon substrate having at least one opening and having a doped region formed therein and at a bottom portion of the opening; a titanium layer conformably formed in the opening, such that the titanium layer directly contacts the silicon substrate through the opening; a first barrier layer conformably formed on the titanium layer in the opening; and a second barrier layer conformably formed on a top surface of the first barrier layer in the opening, wherein the second barrier layer fills into the first barrier layer at the bottom corner of the opening from the top surface of the first barrier layer. | ||
| 地址 | Hsinchu TW | ||