发明名称 Light source control device
摘要 A semiconductor light source control device includes a driver circuit, which generates a drive current Iout flowing through a plurality of LEDs connected in series and which performs control such that the amount of the drive current is brought close to a target value, and bypass switches, which are on-off controlled by a control signal, the bypass switches being connected in parallel with the corresponding LEDs. The semiconductor light source control device is configured such that when the control signal indicates the off-state of the bypass switches, a voltage across the corresponding LEDs is clamped at an upper limit by using the bypass switches.
申请公布号 US9265109(B2) 申请公布日期 2016.02.16
申请号 US201314540392 申请日期 2013.05.10
申请人 KOITO MANUFACTURING CO., LTD. 发明人 Muramatsu Takao;Ito Masayasu;Saito Kazuki
分类号 H05B37/02;H05B33/08 主分类号 H05B37/02
代理机构 Buchanan Ingersoll & Rooney PC 代理人 Buchanan Ingersoll & Rooney PC
主权项 1. A light source control device comprising: a driver circuit that generates a drive current flowing through a plurality of semiconductor light sources connected in series and that performs control such that an amount of the drive current is brought close to a target value; and a bypass/limiter circuit connected in parallel with at least part of the plurality of semiconductor light sources, wherein the bypass/limiter circuit includes: a bypass switch including an N-channel MOSFET having a gate, a source and a drain, wherein ON/OFF state of the bypass switch is controlled according to a drive signal applied across the gate and the source of the N-channel MOSFET; anda clamp circuit provided between the gate and the drain of the N-channel MOSFET, wherein the clamp circuit clamps the gate-drain voltage of the N-channel MOSFET below a predetermined voltage level VCL, and wherein in a condition where a low voltage VL is applied across the gate and the source of the N-channel MOSFET such that the bypass switch is in off-state, a voltage across the at least part of the plurality of semiconductor light sources is clamped below an upper limit given by VL+VCL.
地址 Minato-Ku, Tokyo JP