发明名称 |
Light source control device |
摘要 |
A semiconductor light source control device includes a driver circuit, which generates a drive current Iout flowing through a plurality of LEDs connected in series and which performs control such that the amount of the drive current is brought close to a target value, and bypass switches, which are on-off controlled by a control signal, the bypass switches being connected in parallel with the corresponding LEDs. The semiconductor light source control device is configured such that when the control signal indicates the off-state of the bypass switches, a voltage across the corresponding LEDs is clamped at an upper limit by using the bypass switches. |
申请公布号 |
US9265109(B2) |
申请公布日期 |
2016.02.16 |
申请号 |
US201314540392 |
申请日期 |
2013.05.10 |
申请人 |
KOITO MANUFACTURING CO., LTD. |
发明人 |
Muramatsu Takao;Ito Masayasu;Saito Kazuki |
分类号 |
H05B37/02;H05B33/08 |
主分类号 |
H05B37/02 |
代理机构 |
Buchanan Ingersoll & Rooney PC |
代理人 |
Buchanan Ingersoll & Rooney PC |
主权项 |
1. A light source control device comprising:
a driver circuit that generates a drive current flowing through a plurality of semiconductor light sources connected in series and that performs control such that an amount of the drive current is brought close to a target value; and a bypass/limiter circuit connected in parallel with at least part of the plurality of semiconductor light sources, wherein the bypass/limiter circuit includes:
a bypass switch including an N-channel MOSFET having a gate, a source and a drain, wherein ON/OFF state of the bypass switch is controlled according to a drive signal applied across the gate and the source of the N-channel MOSFET; anda clamp circuit provided between the gate and the drain of the N-channel MOSFET, wherein the clamp circuit clamps the gate-drain voltage of the N-channel MOSFET below a predetermined voltage level VCL, and wherein in a condition where a low voltage VL is applied across the gate and the source of the N-channel MOSFET such that the bypass switch is in off-state, a voltage across the at least part of the plurality of semiconductor light sources is clamped below an upper limit given by VL+VCL. |
地址 |
Minato-Ku, Tokyo JP |